School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.
Nanotechnology. 2013 Mar 8;24(9):095603. doi: 10.1088/0957-4484/24/9/095603. Epub 2013 Feb 12.
p-type ZnSe nanowires (NWs) with tunable electrical conductivity were fabricated on a large scale by evaporating a mixed powder composed of ZnSe and Sb in different ratios. According to the structural characterization, the Sb-doped ZnSe NWs are of single crystalline form and grow along the [001] direction. The presence of Sb in the ZnSe NWs was confirmed by XPS spectra. Electrical measurement of a single ZnSe:Sb NW based back-gate metal-oxide field-effect-transistor reveals that all the doped NWs exhibit typical p-type conduction characteristics, and the conductivity can be tuned over eight orders of magnitude, from 6.36 × 10(-7) S cm(-1) for the undoped sample to ∼37.33 S cm(-1) for the heavily doped sample. A crossed p-n nano-heterojunction photodetector made from the as-doped nanostructures displays pronounced rectification behavior, with a rectification ratio as high as 10(3) at ±5 V. Remarkably, it exhibits high sensitivity to ultraviolet light illumination with good reproducibility and quick photoresponse. Finally, the work mechanism of such a p-n junction based photodetector was elucidated. The generality of the above result suggests that the as-doped p-type ZnSe NWs will find wide application in future optoelectronics devices.
p 型 ZnSe 纳米线（NWs）具有可调导电性，通过蒸发由不同比例的 ZnSe 和 Sb 组成的混合粉末大规模制备。根据结构表征，Sb 掺杂的 ZnSe NWs 为单晶形式，沿 [001] 方向生长。XPS 光谱证实了 Sb 存在于 ZnSe NWs 中。基于单个 ZnSe:Sb NW 的背栅金属氧化物场效应晶体管的电测量表明，所有掺杂的 NWs 都表现出典型的 p 型传导特性，并且电导率可以在八个数量级上进行调节，从未掺杂样品的 6.36×10(-7) S cm(-1)到重掺杂样品的约 37.33 S cm(-1)。由掺杂纳米结构制成的交叉 p-n 纳米异质结光电探测器显示出明显的整流行为，在±5 V 时的整流比高达 10(3)。值得注意的是，它对紫外光照射具有高灵敏度、良好的重现性和快速光响应。最后，阐明了基于这种 p-n 结的光电探测器的工作机制。上述结果的普遍性表明，掺杂的 p 型 ZnSe NWs 将在未来的光电子器件中得到广泛应用。
