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阿司匹林晶型(I)和(II)的漫散射研究

Diffuse scattering study of aspirin forms (I) and (II).

作者信息

Chan E J, Welberry T R, Heerdegen A P, Goossens D J

机构信息

Research School of Chemistry, Australian National University, Canberra, ACT 0200, Australia.

出版信息

Acta Crystallogr B. 2010 Dec;66(Pt 6):696-707. doi: 10.1107/S0108768110037055. Epub 2010 Nov 10.

Abstract

Full three-dimensional diffuse scattering data have been recorded for both polymorphic forms [(I) and (II)] of aspirin and these data have been analysed using Monte Carlo computer modelling. The observed scattering in form (I) is well reproduced by a simple harmonic model of thermally induced displacements. The data for form (II) show, in addition to thermal diffuse scattering (TDS) similar to that in form (I), diffuse streaks originating from stacking fault-like defects as well as other effects that can be attributed to strain induced by these defects. The present study has provided strong evidence that the aspirin form (II) structure is a true polymorph with a structure quite distinct from that of form (I). The diffuse scattering evidence presented shows that crystals of form (II) are essentially composed of large single domains of the form (II) lattice with a relatively small volume fraction of intrinsic planar defects or faults comprising misoriented bilayers of molecular dimers. There is evidence of some local aggregation of these defect bilayers to form small included regions of the form (I) structure. Evidence is also presented that shows that the strain effects arise from the mismatch of molecular packing between the defect region and the surrounding form (II) lattice. This occurs at the edges of the planar defects in the b direction only.

摘要

已记录了阿司匹林两种多晶型物[(I)型和(II)型]的完整三维漫散射数据,并使用蒙特卡罗计算机建模对这些数据进行了分析。(I)型中观察到的散射可以通过热致位移的简单谐波模型很好地再现。(II)型的数据显示,除了与(I)型中类似的热漫散射(TDS)外,还有源自堆垛层错状缺陷的漫散条纹以及可归因于这些缺陷引起的应变的其他效应。本研究提供了有力证据,表明阿司匹林(II)型结构是一种真正的多晶型物,其结构与(I)型截然不同。所呈现的漫散射证据表明,(II)型晶体基本上由(II)型晶格的大单晶域组成,具有相对较小体积分数的本征平面缺陷或断层,这些缺陷或断层由分子二聚体的取向错误双层组成。有证据表明,这些缺陷双层会局部聚集形成(I)型结构的小包含区域。还提供了证据表明,应变效应源于缺陷区域与周围(II)型晶格之间分子堆积的不匹配。这仅发生在b方向平面缺陷的边缘。

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