Podhorodecki A, Zatryb G, Misiewicz J, Gourbilleau F, Dufour C
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland.
J Nanosci Nanotechnol. 2010 Sep;10(9):5648-52. doi: 10.1166/jnn.2010.2453.
Silicon reach-silicon-oxide (SRSO) film containing silicon nanoclusters was obtained by the reactive magnetron sputtering. Photoluminescence (PL) spectra were measured as a function of temperature at different excitation wavelengths and additionally at different excitation power densities. Obtained PL spectra characterize by two emission bands centered at 1.6 and 2.4 eV. For these bands, temperature behaviour of PL intensities strongly differs but clearly correlate each other. Moreover, it has been observed that obtained PL intensities versus temperature exhibit a strong dependence on the excitation power density in the low temperature range.
通过反应磁控溅射制备了含有硅纳米团簇的硅-氧化硅（SRSO）薄膜。在不同激发波长以及不同激发功率密度下，测量了光致发光（PL）光谱随温度的变化。所获得的PL光谱的特征是有两个分别位于1.6 eV和2.4 eV的发射带。对于这些能带，PL强度的温度行为有很大差异，但彼此明显相关。此外，还观察到在低温范围内，所获得的PL强度随温度的变化对激发功率密度有很强的依赖性。
