表面工程化硅纳米晶体的温度依赖光致发光

Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals.

作者信息

Mitra Somak, Švrček Vladimir, Macias-Montero Manual, Velusamy Tamilselvan, Mariotti Davide

机构信息

Nanotechnology &Integrated Bio-Engineering Centre-NIBEC, Ulster University, UK.

Research Center for Photovoltaic Technologies, AIST, Tsukuba, 305-8568, Japan.

出版信息

Sci Rep. 2016 Jun 14;6:27727. doi: 10.1038/srep27727.

DOI:10.1038/srep27727

PMID:27296771

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4906357/

Abstract

In this work we report on temperature-dependent photoluminescence measurements (15-300 K), which have allowed probing radiative transitions and understanding of the appearance of various transitions. We further demonstrate that transitions associated with oxide in SiNCs show characteristic vibronic peaks that vary with surface characteristics. In particular we study differences and similarities between silicon nanocrystals (SiNCs) derived from porous silicon and SiNCs that were surface-treated using a radio-frequency (RF) microplasma system.

摘要

在这项工作中，我们报告了温度相关的光致发光测量结果（15 - 300K），这些测量使得我们能够探测辐射跃迁并理解各种跃迁的出现情况。我们进一步证明，与硅纳米晶中的氧化物相关的跃迁呈现出随表面特性变化的特征振动峰。特别是，我们研究了由多孔硅衍生的硅纳米晶（SiNCs）与使用射频（RF）微等离子体系统进行表面处理的SiNCs之间的异同。