Amri Chohdi, Liu Shengzhong Frank, Najar Adel
Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, United Arab Emirates.
Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l'Energie, Technopole de Borj Cedria, BP: 95, Hammam-Lif 2050, Tunisia.
Nanomaterials (Basel). 2023 May 10;13(10):1602. doi: 10.3390/nano13101602.
Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and multi-peak photoluminescence (PL) emissions. The lateral and vertical etching rates (LER and VER) were discussed based on the etching mechanism of the VP-Ag-ACE. The antireflective suitability of the vapor-etched layer has been evaluated by a reflectivity measurement and exhibits reflectivity values lower than 3%. The PL emission at both room and low temperatures emissions were deeply discussed and correlated with the structural properties of the Si morphologies and their surface states based on the FTIR results.
基于广泛使用的湿法金属辅助化学蚀刻，我们在本工作中开发了一种新型的气相银辅助化学蚀刻（VP-Ag-ACE）方法，该方法适用于制备具有强、可见且多峰光致发光（PL）发射的高掺杂p型硅（Si）纳米结构。基于VP-Ag-ACE的蚀刻机制，讨论了横向和纵向蚀刻速率（LER和VER）。通过反射率测量评估了气相蚀刻层的抗反射适用性，其反射率值低于3%。基于傅里叶变换红外光谱（FTIR）结果，深入讨论了室温和低温下的PL发射，并将其与Si形貌的结构特性及其表面状态相关联。
