Yu Haibo, Tian Xiaojun, Dong Zaili, Li Wen J
State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110016, China.
J Nanosci Nanotechnol. 2010 Nov;10(11):7000-4. doi: 10.1166/jnn.2010.2805.
Nanoscale electronic devices made from carbon nanotubes (CNTs) such as transistors and sensors are much smaller and potentially more versatile than those built using conventional IC technology. In this paper, we present a method that uses dielectrophoretic (DEP) manipulation process for the fabrication of single-channel and multi-channel carbon nanotube field effect transistors (CNT-FETs). For a typical fabrication process, single-walled carbon nanotubes (SWCNTs) are first pre-aligned to micron-precision range between two microelectrodes using DEP technique. The typically applied alternating current (AC) voltage to generate the DEP force for manipulation has a frequency of 1 MHz and amplitude of 10 V. We first demonstrated single-channel or multi-channel structures of CNT-FETs. An AFM is then used to "clean" or "sweep away" unwanted particles or CNTs around the electrodes. Lastly, the fabricated FETs were covered in a polymethylmethacrylate (PMMA) thin film and treated with an annealing process. The PMMA covered devices show improved performances over the non-covered devices.
由碳纳米管（CNT）制成的纳米级电子器件，如晶体管和传感器，比使用传统集成电路技术制造的器件要小得多，并且可能具有更多的用途。在本文中，我们提出了一种使用介电泳（DEP）操纵工艺来制造单通道和多通道碳纳米管场效应晶体管（CNT-FET）的方法。对于典型的制造工艺，首先使用DEP技术将单壁碳纳米管（SWCNT）在两个微电极之间预对准到微米精度范围。通常施加的用于产生DEP操纵力的交流（AC）电压频率为1 MHz，幅度为10 V。我们首先展示了CNT-FET的单通道或多通道结构。然后使用原子力显微镜（AFM）“清理”或“扫除”电极周围不需要的颗粒或碳纳米管。最后，将制造的场效应晶体管覆盖在聚甲基丙烯酸甲酯（PMMA）薄膜中，并进行退火处理。覆盖有PMMA的器件比未覆盖的器件表现出更好的性能。
