Mei H P, Zhang Z M, Ding Z J
Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
J Nanosci Nanotechnol. 2010 Nov;10(11):7824-8. doi: 10.1166/jnn.2010.2925.
With the development of the third generation synchrotron radiation sources the X-ray photoemission electron microscopy (XPEEM) is playing as a powerful tool for analyzing specimens with spatial resolution about tens of nanometer. It has been used to observe the chemical reaction process, and to investigate the surfaces, interfaces, thin films, buried layers and nano-structures. XPEEM image signals are contributed from photoelectrons, Auger electrons, backscattering electrons and secondary electrons excited by X-rays of certain energy. In this work, a Monte Carlo model for XPEEM image simulation is built. XPEEM images in total electron yield (TEY) mode are simulated with this model for several nanostructures (spheres and cylinders) of silver deposited on/in a silicon substrate (Ag/Si). The simulated XPEEM image in TEY mode for Ag dot array on a Si substrate is quite close to an experimental image. Furthermore, the XPEEM image simulation has been performed for different incident X-rays and for different geometric structures.
