Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Via alla Cascata 56/c, Trento 38123, Italy.
ACS Nano. 2011 Jan 25;5(1):283-90. doi: 10.1021/nn1027032. Epub 2010 Dec 9.
We investigated the performance of carbon nanotube (CNT) array electrodes applied to n-type and ambipolar phenyl-C61-butyric acid methyl ester (PCBM) thin film transistors on a SiO(2) dielectric substrate. Compared to conventional Au electrodes, CNT arrays provide better injection efficiency, improved switching behavior, higher electron mobility, and lower contact resistance. Experiments on ambipolar PCBM transistors indicate that the injection performance is enhanced by the electrostatics of the CNT contacts, which promotes electron and hole tunneling across Schottky barriers at the PCBM/nanotube interface. The use of CNT arrays is a valid replacement to low workfunction metals, which are often reactive in air and difficult to process. Our work paves the way for a widespread use of carbon nanotube array electrodes in high-performance n-type and p-type organic thin film transistors.
我们研究了应用于 n 型和双极性苯基-C61-丁酸甲酯（PCBM）薄膜晶体管的碳纳米管（CNT）阵列电极在 SiO2 电介质衬底上的性能。与传统的 Au 电极相比，CNT 阵列提供了更好的注入效率、改善的开关行为、更高的电子迁移率和更低的接触电阻。对双极性 PCBM 晶体管的实验表明，CNT 接触的静电增强了注入性能，促进了电子和空穴在 PCBM/纳米管界面处的肖特基势垒的隧穿。使用 CNT 阵列是替代低功函数金属的有效方法，因为低功函数金属在空气中往往具有反应性且难以处理。我们的工作为在高性能 n 型和 p 型有机薄膜晶体管中广泛使用碳纳米管阵列电极铺平了道路。
