Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
ACS Nano. 2011 Jan 25;5(1):565-73. doi: 10.1021/nn102697r. Epub 2010 Dec 13.
One of the challenges in the synthesis of hybrid materials with nanoscale structure is to precisely control morphology across length scales. Using a one-step electrodeposition process on indium tin oxide (ITO) substrates followed by annealing, we report here the preparation of materials with preferentially oriented lamellar domains of electron donor surfactants and the semiconductor ZnO. We found that either increasing the concentration of surfactant or the water to dimethyl sulfoxide ratio of solutions used resulted in the suppression of bloomlike morphologies and enhanced the density of periodic domains on ITO substrates. Furthermore, by modifying the surface of the ITO substrate with the conductive polymer blend poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), we were able to alter the orientation of these electrodeposited lamellar domains to be perpendicular to the substrate. The long-range orientation achieved was characterized by 2D grazing incidence small-angle X-ray scattering. This high degree of orientation in electronically active hybrids with alternating nanoscale p-type and n-type domains is of potential interest in photovoltaics or thermoelectric materials.
在合成具有纳米结构的混合材料时，面临的挑战之一是精确控制跨尺度的形态。本文采用在铟锡氧化物（ITO）衬底上进行一步电沉积，然后退火的方法，报告了优先取向的电子给体表面活性剂和半导体 ZnO 的层状畴的材料的制备。我们发现，无论是增加表面活性剂的浓度还是改变水与二甲基亚砜的比例，都会抑制花状形态的形成，并增加 ITO 衬底上周期性畴的密度。此外，通过用导电聚合物共混物聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）修饰 ITO 衬底的表面，我们能够改变这些电沉积层状畴的方向使其垂直于衬底。通过二维掠入射小角 X 射线散射对实现的长程取向进行了表征。在具有交替纳米 p 型和 n 型畴的电子活性混合材料中实现的这种高取向度在光伏或热电材料中具有潜在的应用价值。
