Lee Yeeu-Chang, Ni Ching-Huai, Chen Chih-Yeeu
Department of Mechanical Engineering and Center for Nano-Technology, Chung Yuan Christian University, Chung Li 32023, Taiwan.
Opt Express. 2010 Nov 8;18 Suppl 4:A489-98. doi: 10.1364/OE.18.00A489.
Analysis of the various light extraction efficiency enhancement mechanisms for the GaN-based light emitting diodes (LEDs) was investigated. Experiments utilized the imprinting technique to fabricate pyramid and inverted pyramid microstructures. Roughness treatment was then integrated with these imprinting structures on patterned sapphire substrate (PSS) LEDs. An approximate 33% improvement in light output power was obtained using the pyramid profile when compared with the planar LED. This was nearly 15% higher than that of the inverted pyramid profile. The roughness effect provided an approximate 5% efficiency enhancement. The total light enhanced efficiency increased to 85.9% by integrating the imprinting pyramid structure, PSS, and surface roughness.
对基于氮化镓的发光二极管（LED）的各种光提取效率增强机制进行了分析研究。实验采用压印技术制造金字塔形和倒金字塔形微结构。然后将粗糙度处理与图案化蓝宝石衬底（PSS）LED上的这些压印结构相结合。与平面LED相比，使用金字塔形轮廓时光输出功率提高了约33%。这比倒金字塔形轮廓高出近15%。粗糙度效应使效率提高了约5%。通过整合压印金字塔结构、PSS和表面粗糙度，总光增强效率提高到了85.9%。
