Zhu Benpeng, Han Jiangxue, Shi Jing, Shung K Krik, Wei Q, Huang Yuhong, Kosec M, Zhou Qifa
Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
J Am Ceram Soc. 2010 Oct;93(10):2929-2931. doi: 10.1111/j.1551-2916.2010.03873.x.
Piezoelectric 0.65Pb(Mg(1/3)Nb(2/3))O(3)-0.35PbTiO(3) (PMN-35PT) thick film with a thickness of approximately 12 µm has been deposited on the platinum buffered Si substrate via a sol-gel composite method. The separation of the film from the substrate was achieved using a wet chemical method. The lifted-off PMN-35PT thick film exhibited good dielectric and ferroelectric properties. At 1 kHz, the dielectric constant and the dielectric loss were 3,326 and 0.037, respectively, while the remnant polarization was 30.0 µC/cm(2). A high frequency single element acoustic transducer fabricated with this film showed a bandwidth at -6 dB of 63.6% at 110 MHz.
通过溶胶 - 凝胶复合方法在铂缓冲硅衬底上沉积了厚度约为12 µm的压电0.65Pb(Mg(1/3)Nb(2/3))O(3)-0.35PbTiO(3)（PMN - 35PT）厚膜。使用湿化学方法实现了薄膜与衬底的分离。剥离后的PMN - 35PT厚膜表现出良好的介电和铁电性能。在1 kHz时，介电常数和介电损耗分别为3326和0.037，而剩余极化强度为30.0 µC/cm²。用该薄膜制作的高频单元素声换能器在110 MHz时 - 6 dB带宽为63.6%。
