Zhang Tao, Ou-Yang Jun, Yang Xiaofei, Zhu Benpeng
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Materials (Basel). 2018 Sep 5;11(9):1621. doi: 10.3390/ma11091621.
Approximately 25 μm Pb(MgNb)O₃⁻PbTiO₃ (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this damage free transfer was explored and analyzed. Compared with the film on Silicon substrate, the transferred one exhibited superior dielectric, ferroelectric and piezoelectric properties. These promising results indicate that transferred PMN-PT thick film possesses the capability for piezoelectric device application, especially for ultrasound transducer fabrication. Most importantly, this chemical route opens a new path for transfer of thick film.
基于溶胶 - 凝胶/复合路线合成了约25μm厚的Pb(MgNb)O₃⁻PbTiO₃(PMN - PT)厚膜。采用一种新型湿化学方法成功地将获得的PMN - PT厚膜从硅衬底转移到导电银环氧树脂上。对这种无损转移的机制进行了探索和分析。与硅衬底上的薄膜相比,转移后的薄膜表现出优异的介电、铁电和压电性能。这些令人鼓舞的结果表明,转移后的PMN - PT厚膜具有用于压电器件应用的能力,特别是用于超声换能器制造。最重要的是,这种化学路线为厚膜转移开辟了一条新途径。