National Institute for Materials Science, Tsukuba 305-0047, Japan.
Ultramicroscopy. 2011 May;111(6):576-83. doi: 10.1016/j.ultramic.2010.11.020. Epub 2010 Dec 2.
Laser assisted field evaporation using ultraviolet (UV) wavelength gives rise to better mass resolution and signal-to-noise ratio in atom probe mass spectra of metals, semiconductors and insulators compared to infrared and green lasers. Combined with the site specific specimen preparation techniques using the lift-out and annular Ga ion milling in a focused ion beam machine, a wide variety of materials including insulating oxides can be quantitatively analyzed by the three-dimensional atom probe using UV laser assisted field evaporation. After discussing laser irradiation conditions for optimized atom probe analyses, recent atom probe tomography results on oxides, semiconductor devices and grain boundaries of sintered magnets are presented.
与红外和绿光激光器相比，紫外（UV）波长的激光辅助场蒸发在金属、半导体和绝缘体的原子探针质谱中产生了更好的质量分辨率和信噪比。结合使用聚焦离子束机中的提升和环形 Ga 离子铣削的特定位置的试样制备技术，使用 UV 激光辅助场蒸发可以对包括绝缘氧化物在内的各种材料进行定量分析。在讨论了优化原子探针分析的激光辐照条件之后，本文展示了氧化物、半导体器件和烧结磁体晶界的原子探针断层扫描的最新结果。
