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层堆积对石墨烯中组合拉曼模式的影响。

Effects of layer stacking on the combination Raman modes in graphene.

机构信息

Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, Ohio 45433, United States.

出版信息

ACS Nano. 2011 Mar 22;5(3):1594-9. doi: 10.1021/nn1031017. Epub 2011 Jan 4.

Abstract

We have observed new combination modes in the range from 1650 to 2300 cm(-1) in single-(SLG), bi-, few-layer and incommensurate bilayer graphene (IBLG) on silicon dioxide substrates. A peak at ∼1860 cm(-1) (iTALO-) is observed due to a combination of the in-plane transverse acoustic (iTA) and the longitudinal optical (LO) phonons. The intensity of this peak decreases with increasing number of layers and this peak is absent for bulk graphite. The overtone of the out-of-plane transverse optical (oTO) phonon at ∼1750 cm(-1), also called the M band, is suppressed for both SLG and IBLG. In addition, two previously unidentified modes at ∼2200 and ∼1880 cm(-1) are observed in SLG. The 2220 cm(-1) (1880 cm(-1)) mode is tentatively assigned to the combination mode of in-plane transverse optical (iTO) and TA phonons (oTO+LO phonons) around the K point in the graphene Brillouin zone. Finally, the peak frequency of the 1880 (2220) cm(-1) mode is observed to increase (decrease) linearly with increasing graphene layers.

摘要

我们在二氧化硅衬底上的单(SLG)、双(BLG)、少层和非共形双层石墨烯(IBLG)中观察到了 1650 到 2300cm(-1) 范围内的新组合模式。由于面内横声(iTA)和纵光学(LO)声子的组合,在约 1860cm(-1)(iTALO-)处观察到一个峰。随着层数的增加,这个峰的强度降低,而块状石墨中没有这个峰。在约 1750cm(-1)处的面外横光学(oTO)声子的倍频,也称为 M 带,对于 SLG 和 IBLG 都是被抑制的。此外,在 SLG 中还观察到了两个以前未被识别的模式,约 2200cm(-1)和 1880cm(-1)。2220cm(-1)(1880cm(-1))模式被暂时分配给在石墨烯布里渊区的 K 点附近的面内横光学(iTO)和 TA 声子(oTO+LO 声子)的组合模式。最后,观察到 1880(2220)cm(-1) 模式的峰值频率随石墨烯层数的增加而线性增加(减少)。

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