Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden.
Nanotechnology. 2011 Feb 25;22(8):085602. doi: 10.1088/0957-4484/22/8/085602. Epub 2011 Jan 17.
We have investigated low temperature growth of GaN nanostructures using halide vapor phase epitaxy on c-oriented Al(2)O(3) and Au coated Al(2)O(3) substrates. Depending on the III/V ratio and the growth temperature, the shape and density of the structures could be controlled. By increasing the GaCl partial pressure, the structure changed from dot-like to nanotubes. The nanotubes, which could be open or closed, were about 1 µm long with a diameter of typically 200 nm. In addition, it was observed that the nanostructures were spontaneously nucleated at droplets of Ga or, when using Au coated Al(2)O(3), on droplets of Au/Ga alloy. By varying the growth temperature, the inner diameter of the nanotubes could be controlled. The experimental results suggest that this approach with pre-patterned Au coated Al(2)O(3)substrates has the potential for fabrication of well-organized nanotubes with a high density.
我们采用卤化物气相外延法在 c 面取向的 Al2O3 和 Au 涂层 Al2O3 衬底上研究了 GaN 纳米结构的低温生长。根据 III/V 比和生长温度，可以控制结构的形状和密度。通过增加 GaCl 分压，结构从点状变为纳米管。纳米管可以是开放的也可以是封闭的，长约 1 µm，直径通常为 200nm。此外，还观察到纳米结构自发地在 Ga 液滴上或在使用 Au 涂层 Al2O3 时在 Au/Ga 合金液滴上形核。通过改变生长温度，可以控制纳米管的内径。实验结果表明，这种使用预图案化 Au 涂层 Al2O3 衬底的方法具有制备高密度、组织良好的纳米管的潜力。
