Lekhal K, Avit G, André Y, Trassoudaine A, Gil E, Varenne C, Bougerol C, Monier G, Castelluci D
Clermont Université, Université Blaise Pascal, Institut Pascal, BP 10448, F-63000 Clermont-Ferrand, France.
Nanotechnology. 2012 Oct 12;23(40):405601. doi: 10.1088/0957-4484/23/40/405601. Epub 2012 Sep 14.
The hydride vapor phase epitaxy (HVPE) process exhibits unexpected properties when growing GaN semiconductor nanowires (NWs). With respect to the classical well-known methods such as metal organic vapor phase epitaxy and molecular beam epitaxy, this near-equilibrium process based on hot wall reactor technology enables the synthesis of nanowires with a constant cylinder shape over unusual length. Catalyst-assisted HVPE shows a record short time process (less than 20 min) coupled to very low precursor consumption. NWs are grown at a fast solidification rate (50 μm h(-1)), facilitated by the high decomposition frequency of the chloride molecules involved in the HVPE process as element III precursors. In this work growth temperature and V/III ratio were investigated to determine the growth mechanism which led to such long NWs. Analysis based on the Ni-Ga phase diagram and the growth kinetics of near-equilibrium HVPE is proposed.
在生长氮化镓半导体纳米线（NWs）时，氢化物气相外延（HVPE）工艺展现出了意想不到的特性。相对于诸如金属有机气相外延和分子束外延等经典的知名方法，这种基于热壁反应器技术的近平衡工艺能够在异常长的长度上合成具有恒定圆柱形状的纳米线。催化剂辅助的HVPE显示出创纪录的短时间工艺（少于20分钟），同时前驱体消耗极低。纳米线以快速凝固速率（50μm h⁻¹）生长，这得益于HVPE工艺中作为Ⅲ族元素前驱体的氯化物分子的高分解频率。在这项工作中，对生长温度和V/Ⅲ比进行了研究，以确定导致如此长纳米线的生长机制。提出了基于镍 - 镓相图和近平衡HVPE生长动力学的分析。
