Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Palaiseau, France.
Nanotechnology. 2011 Feb 25;22(8):085601. doi: 10.1088/0957-4484/22/8/085601. Epub 2011 Jan 17.
The synthesis of few-layered graphene is performed by ion implantation of carbon species in thin nickel films, followed by high temperature annealing and quenching. Although ion implantation enables a precise control of the carbon content and of the uniformity of the in-plane carbon concentration in the Ni films before annealing, we observe thickness non-uniformities in the synthesized graphene layers after high temperature annealing. These non-uniformities are probably induced by the heterogeneous distribution/topography of the graphene nucleation sites on the Ni surface. Taken altogether, our results indicate that the number of graphene layers on top of Ni films is controlled by the nucleation process on the Ni surface rather than by the carbon content in the Ni film.
通过在薄镍膜中注入碳物种，然后进行高温退火和淬火，可以合成少层石墨烯。虽然离子注入可以在退火前精确控制碳含量和 Ni 膜中平面内碳浓度的均匀性，但我们在高温退火后观察到合成石墨烯层的厚度不均匀。这些不均匀性可能是由 Ni 表面上石墨烯成核位点的不均匀分布/形貌引起的。总的来说，我们的结果表明，Ni 薄膜上石墨烯层数的数量是由 Ni 表面上的成核过程而不是 Ni 薄膜中的碳含量控制的。
