Yang Chao, Liang Hongwei, Zhang Zhenzhong, Xia Xiaochuan, Tao Pengcheng, Chen Yuanpeng, Zhang HeQiu, Shen Rensheng, Luo Yingmin, Du Guotong
School of Physics, Dalian University of Technology Dalian 116024 China
School of Microelectronics, Dalian University of Technology Dalian 116024 China.
RSC Adv. 2018 Feb 8;8(12):6341-6345. doi: 10.1039/c8ra00523k. eCollection 2018 Feb 6.
A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal β-GaO. Cu and Ti/Au were deposited on the top and bottom surface of GaO as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 × 10 at ±2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector.
基于单晶β-GaO制备了肖特基势垒二极管（SBD）日盲光电探测器。分别在GaO的顶面和底面沉积Cu和Ti/Au作为肖特基接触和欧姆接触。该SBD在±2 V时表现出高达5×10的更高整流比。光响应光谱在241 nm处显示出最大响应度，截止波长为256 nm。日盲/紫外和日盲/可见光抑制比分别可达到高达200和1000的高水平。有趣的是，该器件在零偏压下对日盲波长有明显响应，这证实了它可以用作自供电日盲光电探测器。
