Department of Physics and ‡Department of Materials Science and Engineering, University of Michigan , Ann Arbor, Michigan 48109, United States.
Nano Lett. 2011 Mar 9;11(3):1040-3. doi: 10.1021/nl1038902. Epub 2011 Feb 8.
We report on scanning microphotoluminescence measurements that spectrally and spatially resolve emission from individual InAs quantum dots that were induced by focused ion beam patterning. Multilayers of quantum dots were spaced 2 μm apart, with a minimum single dot emission line width of 160 μeV, indicating good optical quality for dots patterned using this technique. Mapping 16 array sites, at least 65% were occupied by optically active dots and the spectral inhomogeneity was within 30 meV.
我们报告了扫描微光致发光测量结果，该结果在光谱和空间上分辨了由聚焦离子束图案化诱导的单个 InAs 量子点的发射。量子点的多层间隔为 2 μm，最小单量子点发射线宽为 160 μeV，表明使用该技术图案化的点具有良好的光学质量。对 16 个阵列位置进行映射，至少有 65%的位置被光活性点占据，并且光谱非均匀性在 30 meV 以内。
