Wang Yun Ran, Han Im Sik, Jin Chao-Yuan, Hopkinson Mark
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S3 7HQ, United Kingdom.
College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310007, China.
ACS Appl Nano Mater. 2020 May 22;3(5):4739-4746. doi: 10.1021/acsanm.0c00738. Epub 2020 Apr 20.
Precisely ordered arrays of InAs quantum dots are formed on a nanoisland-structured GaAs (100) surface using in situ laser interference during self-assembled molecular beam epitaxial growth. Nanoislands induced by single-pulse four-beam laser interference act as preferential nucleation sites for InAs quantum dots and result in site occupation dependent on the size of nanoislands, the InAs coverage, and the laser parameters. By optimizing the growth and interference conditions, regular dense ordering of single dots was obtained for the first time using this in situ noninvasive approach. The photoluminescence spectra of the resulting quantum dot arrays with a period of 300 nm show good optical quality and uniformity. This technique paves the way for the rapid large-scale fabrication of arrays of single dots to enable quantum information technology device platforms.
在自组装分子束外延生长过程中，利用原位激光干涉在纳米岛结构的GaAs（100）表面形成了精确有序排列的InAs量子点。单脉冲四束激光干涉诱导的纳米岛作为InAs量子点的优先成核位点，导致位点占据情况取决于纳米岛的大小、InAs覆盖度和激光参数。通过优化生长和干涉条件，首次使用这种原位非侵入性方法获得了单量子点的规则密集排列。所得周期为300 nm的量子点阵列的光致发光光谱显示出良好的光学质量和均匀性。该技术为单量子点阵列的快速大规模制造铺平了道路，以实现量子信息技术设备平台。
