Wuhan National Laboratory for Optoelectronics-School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Nanotechnology. 2011 Apr 8;22(14):145705. doi: 10.1088/0957-4484/22/14/145705. Epub 2011 Mar 3.
We report on the synthesis, field electron emission and electric transport properties of a novel nanomaterial: ordered arrays of crystallized silicon multi-branch nanostructures. A decent field electron emission with relatively low turn-on field of 3.16 V µm⁻¹ and high field-enhancement factor of 1252 was received for the silicon nanobranches. The relevancies between field-emission current-voltage characteristic, turn-on field, threshold field and sample-anode distance have been thoroughly analyzed. In addition, electrical transport measurements revealed a small electrical resistance of 0.51 MΩ for as-prepared silicon nanobranches. In contrast, by improving the silicon nanobranch-electrode contact, vacuum annealing dramatically reduced the electrical resistance, by a factor approaching two, while thermal oxidation resulted in a much higher resistance due to the amorphous oxide coating of the silicon nanobranches, both of the current versus voltage curves became more linear and symmetrical, and the transport stability was obviously improved.
我们报告了一种新型纳米材料的合成、场电子发射和输运性质：结晶硅多分支纳米结构的有序阵列。硅纳米枝晶的场电子发射具有相对较低的开启场（3.16 V µm⁻¹）和较高的场增强因子（1252）。我们彻底分析了场发射电流-电压特性、开启场、阈值场和样品-阳极距离之间的相关性。此外，电输运测量显示，制备的硅纳米枝晶的电阻很小，为 0.51 MΩ。相比之下，通过改善硅纳米枝晶-电极的接触，真空退火显著降低了电阻，接近两倍，而热氧化由于硅纳米枝晶的非晶氧化层导致电阻更高，电流-电压曲线变得更加线性和对称，传输稳定性明显提高。
