Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas, United States.
Nano Lett. 2011 Apr 13;11(4):1423-7. doi: 10.1021/nl200225j. Epub 2011 Mar 7.
With the advent of atomically thin and flat layers of conducting materials such as graphene, new designs for thin film energy storage devices with good performance have become possible. Here, we report an "in-plane" fabrication approach for ultrathin supercapacitors based on electrodes comprised of pristine graphene and multilayer reduced graphene oxide. The in-plane design is straightforward to implement and exploits efficiently the surface of each graphene layer for energy storage. The open architecture and the effect of graphene edges enable even the thinnest of devices, made from as grown 1-2 graphene layers, to reach specific capacities up to 80 μFcm(-2), while much higher (394 μFcm(-2)) specific capacities are observed multilayer reduced graphene oxide electrodes. The performances of devices with pristine as well as thicker graphene-based structures are examined using a combination of experiments and model calculations. The demonstrated all solid-state supercapacitors provide a prototype for a broad range of thin-film based energy storage devices.
随着原子级薄且平整的导电材料(如石墨烯)的出现,具有良好性能的薄膜储能器件的新设计成为可能。在这里,我们报告了一种基于原始石墨烯和多层还原氧化石墨烯电极的超薄超级电容器的“面内”制造方法。这种面内设计易于实现,并有效地利用了每个石墨烯层的表面进行储能。开放架构和石墨烯边缘的作用使得即使是最薄的器件(由生长的 1-2 个石墨烯层制成)也能达到高达 80 μFcm(-2)的比容量,而多层还原氧化石墨烯电极则能观察到更高的(394 μFcm(-2))比容量。使用实验和模型计算的组合,研究了具有原始和更厚的基于石墨烯结构的器件的性能。所展示的全固态超级电容器为各种基于薄膜的储能器件提供了原型。