Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan.
J Phys Condens Matter. 2010 Dec 1;22(47):474007. doi: 10.1088/0953-8984/22/47/474007. Epub 2010 Nov 15.
A strontium or strontium oxide epitaxial layer was grown using a monoatomic buffer layer of hydrogen on silicon, in spite of a huge lattice mismatch. The onset of the initial growth stage of strontium crystals occur with only one atomic layer deposition. To investigate the growth mechanism in the highly mismatched system, combination analysis using neutron reflection, reflection high-energy electron diffraction, x-ray photoelectron spectra, and stress measurements is employed. The interface structure has opened up a new way to fabricate novel heterostructures, consisting of various kinds of one-, two- or three-dimensional materials for future silicon-based technology.
尽管存在巨大的晶格失配，仍使用硅上的氢单原子缓冲层来生长锶或氧化锶外延层。锶晶体的初始生长阶段仅在单层沉积时开始。为了研究高度失配体系中的生长机制，采用了中子反射、反射高能电子衍射、X 射线光电子能谱和应力测量的组合分析。该界面结构为制造新型异质结构开辟了新途径，这些结构由各种一维、二维或三维材料组成，可用于未来的硅基技术。
