Department of Chemistry, University of North Texas, Denton, TX 76203-5070, USA.
J Phys Condens Matter. 2010 Aug 4;22(30):302002. doi: 10.1088/0953-8984/22/30/302002. Epub 2010 Jul 2.
A significant BN-to-graphene charge donation is evident in the electronic structure of a graphene/h-BN(0001) heterojunction grown by chemical vapor deposition and atomic layer deposition directly on Ru(0001), consistent with density functional theory. This filling of the lowest unoccupied state near the Brillouin zone center has been characterized by combined photoemission/k vector resolved inverse photoemission spectroscopies, and Raman and scanning tunneling microscopy/spectroscopy. The unoccupied σ*(Γ(1) +) band dispersion yields an effective mass of 0.05 m(e) for graphene in the graphene/h-BN(0001) heterostructure, in spite of strong perturbations to the graphene conduction band edge placement.
在通过化学气相沉积和原子层沉积直接在 Ru(0001)上生长的石墨烯/h-BN(0001)异质结的电子结构中，明显存在 BN 到石墨烯的电荷供体，这与密度泛函理论一致。这种对最低未占据态在布里渊区中心附近的填充已通过组合光发射/ k 向量分辨反光发射光谱学、拉曼和扫描隧道显微镜/光谱学进行了表征。未占据的 σ*(Γ(1) +)带色散导致石墨烯/h-BN(0001)异质结构中石墨烯的有效质量为 0.05 m(e)，尽管对石墨烯导带边缘位置有很强的干扰。
