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分子静电势在呋喃⋅⋅⋅XY 和噻吩⋅⋅⋅XY 配合物中形成卤素键中的作用。

The role of molecular electrostatic potentials in the formation of a halogen bond in furan⋅⋅⋅XY and thiophene⋅⋅⋅XY complexes.

机构信息

Institute of Computational Quantum Chemistry, College of Chemistry and Material Science, Hebei Normal University, Shijiazhuang, China.

出版信息

Chemphyschem. 2011 Apr 18;12(6):1080-7. doi: 10.1002/cphc.201100008. Epub 2011 Mar 22.

Abstract

The halogen bonding of furan⋅⋅⋅XY and thiophene⋅⋅⋅XY (X=Cl, Br; Y=F, Cl, Br), involving σ- and π-type interactions, was studied by using MP2 calculations and quantum theory of "atoms in molecules" (QTAIM) studies. The negative electrostatic potentials of furan and thiophene, as well as the most positive electrostatic potential (V(S,max) ) on the surface of the interacting X atom determined the geometries of the complexes. Linear relationships were found between interaction energy and V(S,max) of the X atom, indicating that electrostatic interactions play an important role in these halogen-bonding interactions. The halogen-bonding interactions in furan⋅⋅⋅XY and thiophene⋅⋅⋅XY are weak, "closed-shell" noncovalent interactions. The linear relationship of topological properties, energy properties, and the integration of interatomic surfaces versus V(S,max) of atom X demonstrate the importance of the positive σ hole, as reflected by the computed V(S,max) of atom X, in determining the topological properties of the halogen bonds.

摘要

采用 MP2 计算和分子中原子的量子理论(QTAIM)研究了呋喃···XY 和噻吩···XY(X=Cl、Br;Y=F、Cl、Br)之间的卤键,涉及 σ-和 π-型相互作用。呋喃和噻吩的负静电势以及相互作用 X 原子表面上的最正静电势(V(S,max))决定了配合物的几何形状。发现相互作用能与 X 原子的 V(S,max) 之间存在线性关系,表明静电相互作用在这些卤键相互作用中起着重要作用。呋喃···XY 和噻吩···XY 中的卤键相互作用较弱,属于“闭壳层”非共价相互作用。拓扑性质、能量性质和原子间表面的积分与 X 原子的 V(S,max)之间的线性关系表明,正 σ 空穴的重要性,正如通过计算 X 原子的 V(S,max)所反映的那样,在确定卤键的拓扑性质方面具有重要意义。

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