Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan 106.
Nanoscale. 2012 Oct 21;4(20):6629-36. doi: 10.1039/c2nr30882g.
We demonstrate a novel approach to improve the characteristics of the gold nanoparticle-based organic transistor memory devices by using self-assembled monolayers (SAM) with different functional groups as interfacial modifier. SAM-based interfacial engineering significantly improved the hysteresis, memory window, and on/off ratio of a nano floating gate memory (NFGM) at zero gate voltage. This NFGM showed a large memory window of up to 190 V and on/off current ratio of 10(5) during writing and erasing with an operation voltage of 100 V of gate bias in a short time, less than 1 s. Furthermore, the devices show excellent nonvolatile behavior for bistable switching. The ON and OFF state can be stably maintained for 10(3) s with an I(on)/I(off) current ratio of 10(6) for a pentafluorophenyl trimethoxysilane modified device. The results suggested the importance of SAM-modified interface for the memory performance of NFGMs.
我们展示了一种改进基于金纳米粒子的有机晶体管存储器件特性的新方法，该方法使用具有不同官能团的自组装单分子层（SAM）作为界面修饰剂。基于 SAM 的界面工程显著改善了纳米浮栅存储器（NFGM）在零栅极电压下的滞后、存储窗口和开/关比。在 100 V 的栅极偏压下，该 NFGM 在写入和擦除过程中仅需不到 1 秒的时间，即可实现高达 190 V 的大存储窗口和 10(5)的开/关电流比。此外，该器件还表现出优异的双稳开关非易失性。对于五氟苯基三甲氧基硅烷修饰的器件，ON 和 OFF 状态可以在 10(3) s 内稳定保持，I(on)/I(off)电流比为 10(6)。结果表明，SAM 修饰的界面对于 NFGM 的存储性能非常重要。
