Chung Sung Mook, Shin Jae-Heon, Lee Jeong-Min, Ryu Min Ki, Cheong Woo-Seok, Park Sang Hee Ko, Hwang Chi-Sun, Cho Kyoung Ik
Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-700, Korea.
J Nanosci Nanotechnol. 2011 Jan;11(1):782-6. doi: 10.1166/jnn.2011.3157.
This paper reports on the structural and optical properties of ZnCuO thin films that were prepared by co-sputtering for the application of p-type-channel transparent thin-film transistors (TFTs). Pure ceramic ZnO and metal Cu targets were prepared for the co-sputtering of the ZnCuO thin films. The effects of the Cu concentration on the structural, optical, and electrical properties of the ZnCuO films were investigated after their heat treatment. It was observed from the XRD measurements that the ZnCuO films with a Cu concentration of 7% had ZnO(002), Cu2O(111), and Cu2O(200) planes. The 7% Cu-doped ZnO films also showed a band-gap energy of approximately 2.05 eV, an average transmittance of approximately 62%, and a p-type carrier density of approximately 1.33 x 10(19) cm-3 at room temperature. The bottom-gated TFTs that were fabricated with the ZnCuO thin film as a p-type channel exhibited an on-off ratio of approximately 6. These results indicate the possibility of applying ZnCuO thin films with variable band-gap energies to ZnO-based optoelectronic devices.
本文报道了通过共溅射制备的用于p型沟道透明薄膜晶体管（TFT）的ZnCuO薄膜的结构和光学性质。制备了纯陶瓷ZnO靶和金属Cu靶用于共溅射ZnCuO薄膜。在热处理后研究了Cu浓度对ZnCuO薄膜的结构、光学和电学性质的影响。通过X射线衍射测量观察到，Cu浓度为7%的ZnCuO薄膜具有ZnO(002)、Cu2O(111)和Cu2O(200)晶面。7% Cu掺杂的ZnO薄膜在室温下还显示出约2.05 eV的带隙能量、约62%的平均透过率和约1.33×10(19) cm-3的p型载流子密度。以ZnCuO薄膜作为p型沟道制备的底栅TFT的开/关比约为6。这些结果表明将具有可变带隙能量的ZnCuO薄膜应用于基于ZnO的光电器件的可能性。
