高消光比10吉比特/秒硅光调制器。

High extinction ratio 10 Gbit/s silicon optical modulator.

作者信息

Rasigade Gilles, Ziebell Melissa, Marris-Morini Delphine, Fédéli Jean-Marc, Milesi Frédéric, Grosse Philippe, Bouville David, Cassan Eric, Vivien Laurent

机构信息

Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS, Orsay, France.

出版信息

Opt Express. 2011 Mar 28;19(7):5827-32. doi: 10.1364/OE.19.005827.

DOI:10.1364/OE.19.005827

PMID:21451607

Abstract

High speed and high extinction ratio silicon optical modulator using carrier depletion is experimentally demonstrated. The phase-shifter is a 1.8 mm-long PIPIN diode which is integrated in a Mach Zehnder interferometer. 8.1 dB Extinction Ratio at 10 Gbit/s is obtained simultaneously with optical loss as low as 6 dB.

摘要

通过实验证明了利用载流子耗尽的高速、高消光比硅光调制器。该移相器是一个集成在马赫曾德尔干涉仪中的1.8毫米长的PIPIN二极管。在10 Gbit/s时获得了8.1 dB的消光比，同时光损耗低至6 dB。