Tu Xiaoguang, Liow Tsung-Yang, Song Junfeng, Luo Xianshu, Fang Qing, Yu Mingbin, Lo Guo-Qiang
Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, 117685, Singapore.
Opt Express. 2013 May 20;21(10):12776-82. doi: 10.1364/OE.21.012776.
We demonstrate silicon Mach-Zehnder Interferometer (MZI) optical modulator with 50.1-Gb/s data rate and 5.56 dB dynamic extinction ratios. The phase shifter is composed by a 4 mm-long reverse-biased p-n junction with a modulation efficiency (V(π) · L(π)) of ~26.7 V · mm and phase shifter loss of ~1.04 dB/mm at V(bias) = -6 V. The measured electro-optic bandwidth reaches 25.6 GHz at V(bias) = -5 V. Compensation doping method and low loss traveling-wave electrodes are utilized to improve the modulator performance. Measurement result demonstrates that reasonable choosing of working point and doping profile of the silicon optical modulator is critical in order to match the performance requirement of the real application.
我们展示了数据速率为50.1 Gb/s且动态消光比为5.56 dB的硅马赫-曾德尔干涉仪（MZI）光调制器。该移相器由一个4 mm长的反向偏置p-n结组成，其调制效率（V(π)·L(π)）约为26.7 V·mm，在V(bias)= -6 V时移相器损耗约为1.04 dB/mm。在V(bias)= -5 V时测得的电光带宽达到25.6 GHz。采用补偿掺杂方法和低损耗行波电极来提高调制器性能。测量结果表明，合理选择硅光调制器的工作点和掺杂分布对于满足实际应用的性能要求至关重要。
