Department of Physics, Indian Institute of Technology Bombay, Mumbai, India.
Nanotechnology. 2011 Jun 3;22(22):225606. doi: 10.1088/0957-4484/22/22/225606. Epub 2011 Apr 1.
Chemical vapour deposition (CVD) is emerging as a popular method for growing large-area graphene on metal substrates. For transferring graphene to other substrates the technique generally used involves deposition of a polymer support with subsequent etching of the metal substrate. Here we report a simpler one-step transfer process. Few-layer graphene (FLG) grown on a Cu substrate were transferred to a silanized wafer by just pressing them together. Hydrogen bonding between the hydroxyl group on FLG and the amine group on silane molecules facilitate the transfer.
化学气相沉积（CVD）作为一种在金属基底上生长大面积石墨烯的方法，正在逐渐兴起。为了将石墨烯转移到其他基底上，通常采用的技术是先沉积一层聚合物支撑体，然后再刻蚀掉金属基底。在这里，我们报告了一种更简单的一步转移工艺。通过将在 Cu 基底上生长的少层石墨烯（FLG）直接压在一起，就可以将其转移到硅烷化的晶圆上。FLG 上的羟基与硅烷分子上的胺基之间的氢键有助于实现转移。
