National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
ACS Nano. 2011 Nov 22;5(11):9144-53. doi: 10.1021/nn203377t. Epub 2011 Oct 19.
We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device-compatible substrate. On the basis of these results, we have developed a "modified RCA clean" transfer method that has much better control of both contamination and crack formation and does not degrade the quality of the transferred graphene. Using this transfer method, high device yields, up to 97%, with a narrow device performance metrics distribution were achieved. This demonstration addresses an important step toward large-scale graphene-based electronic device applications.
我们介绍了一种彻底研究湿法化学方法的结果，该方法用于将化学气相沉积生长的石墨烯从金属生长衬底转移到与器件兼容的衬底上。基于这些结果，我们开发了一种“改良 RCA 清洁”转移方法，该方法对污染和裂纹形成的控制更好，而且不会降低转移石墨烯的质量。使用这种转移方法，实现了高达 97%的高器件产量，并且器件性能指标分布较窄。该演示解决了大规模基于石墨烯的电子器件应用的一个重要步骤。
