Division of Chemistry & Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
Nanoscale. 2013 Mar 21;5(6):2379-87. doi: 10.1039/c3nr33824j.
The extraordinary properties demonstrated for graphene and graphene-related materials can be fully exploited when a large-scale fabrication procedure is made available. Chemical vapor deposition (CVD) of graphene on Cu and Ni substrates is one of the most promising procedures to synthesize large-area and good quality graphene films. Parallel to the fabrication process, a large-scale quality monitoring technique is equally crucial. We demonstrate here a rapid and simple methodology that is able to probe the effectiveness of the growth process over a large substrate area for both Ni and Cu substrates. This method is based on inherent electrochemical signals generated by the underlying metal catalysts when fractures or discontinuities of the graphene film are present. The method can be applied immediately after the CVD growth process without the need for any graphene transfer step and represents a powerful quality monitoring technique for the assessment of large-scale fabrication of graphene by the CVD process.
当大规模制造工艺可用时,石墨烯和与石墨烯相关的材料所表现出的非凡特性将得到充分利用。在 Cu 和 Ni 衬底上通过化学气相沉积(CVD)合成石墨烯是合成大面积高质量石墨烯薄膜最有前途的方法之一。与制造工艺并行的是,大规模质量监测技术同样至关重要。我们在这里展示了一种快速而简单的方法,该方法能够探测 Ni 和 Cu 衬底上大面积衬底的生长过程的有效性。该方法基于当石墨烯膜出现断裂或不连续时,底层金属催化剂产生的固有电化学信号。该方法可以在 CVD 生长工艺之后立即应用,而无需任何石墨烯转移步骤,并且是 CVD 工艺大规模制造石墨烯的评估的有力质量监测技术。