Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511, USA.
Nanotechnology. 2011 Jun 10;22(23):235602. doi: 10.1088/0957-4484/22/23/235602. Epub 2011 Apr 7.
Branched nickel monosilicide (NiSi) nanowires (NWs), for the first time, have been synthesized on Ni foams by laser-assisted chemical vapor deposition using disilane precursor molecules. Studies indicate that 600 °C is the threshold temperature for the growth of a large number of branched NiSi NWs with 100-500 nm long branches extending from the main stems. Below the threshold temperature, unbranched NiSi NWs were obtained. The density of the branched NiSi NWs is relatively higher in comparison to that of the unbranched ones. The growth rate of the branched NiSi NWs at 700 °C is estimated up to 10 µm min(-1). High-resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy of the branched NiSi NWs suggest that the formation of these branched nanostructures is ascribed to the Ni-dominant diffusion process. These NiSi NWs with branched nanostructures could bring them new opportunities in nanodevices.
分支镍单硅化物（NiSi）纳米线（NWs）首次通过使用二硅烷前体分子的激光辅助化学气相沉积在镍泡沫上合成。研究表明，600°C 是大量分支 NiSi NWs 生长的阈值温度，这些 NWs 的长分支从主干延伸出，长度为 100-500nm。低于阈值温度时，得到未分支的 NiSi NWs。与未分支的 NiSi NWs 相比，分支的 NiSi NWs 的密度相对较高。在 700°C 时，分支 NiSi NWs 的生长速率估计高达 10 µm min(-1)。分支 NiSi NWs 的高分辨率透射电子显微镜和能量色散 X 射线光谱表明，这些分支纳米结构的形成归因于 Ni 主导的扩散过程。这些具有分支纳米结构的 NiSi NWs 可能为纳米器件带来新的机遇。
