Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
Nano Lett. 2011 Jun 8;11(6):2424-9. doi: 10.1021/nl2008339. Epub 2011 Apr 29.
We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.
我们报告了一个关于 MOVPE 和 MBE 生长的 InAs 纳米线的晶体质量和电学性能之间关系的系统研究，其晶体结构从纤锌矿到闪锌矿变化。我们发现，这些相的混合物可以表现出比单相纳米线高出 2 个数量级的电阻率，具有温度激活的输运机制。然而，我们还发现，以位错和孪晶面形式存在的缺陷并不会显著影响电阻率。这些发现对于基于纳米线的器件很重要，因为特定多型混合物的不可控形成可能导致不可接受的器件变异性。
