Shapovalov A I, Shiriaev B I
Exp Brain Res. 1978 Nov 15;33(3-4):299-312. doi: 10.1007/BF00235555.
The short-latency DR-EPSPs resistant to Ca2+-lack and to addition of Mn2+ and Mg2+ result from electrical coupling between primary afferents and spinal motoneurons in frogs and toads. There are two time constants by which the time constant for the decay of the electronic DR-EPSP can be described: 1. the membrane time constant which determines the rate of passive decay of the membrane potential shift produced directly by the presynaptic spike, 2. the rate at which the presynaptic after-depolarization (ADP) declines. The latter value is very large as compared with the postsynaptic membrane time constant. Presynaptic tetanization does not change the magnitude of the initial spike-induced component of the EPSP but its later slowly decaying portion is potentiated markedly as a result of the post-tetanic increase in the amplitude of the ADP. The perfusion with substances blocking potential dependent potassium channels (4-AP and TEA) greatly augments the DR-EPSP due to prolongation of the presynaptic spike and appearance of multiple discharges in the presynaptic fibers. An antidromic electrical coupling between motoneurons and the terminals of primary afferents was demonstrated in the isolated amphibian spinal cord perfused with zero Ca2+, 2 mM Mn2+ solution containing TEA or 4-AP. Under these conditions ventral root volleys may evoke local graded depolarizing potentials in some sensory fibers. Such antidromic coupling potentials can reach the critical level for generating a single or multiple discharge.
对缺乏Ca2+以及添加Mn2+和Mg2+具有抗性的短潜伏期背根电刺激兴奋性突触后电位(DR-EPSPs),是由青蛙和蟾蜍的初级传入神经与脊髓运动神经元之间的电耦合产生的。有两个时间常数可用于描述电子DR-EPSP衰减的时间常数:1. 膜时间常数,它决定了由突触前峰电位直接产生的膜电位变化的被动衰减速率;2. 突触前去极化后电位(ADP)下降的速率。与突触后膜时间常数相比,后一个值非常大。突触前强直刺激不会改变EPSP初始峰电位诱导成分的大小,但由于强直刺激后ADP幅度增加,其后期缓慢衰减部分会明显增强。用阻断电压依赖性钾通道的物质(4-氨基吡啶和四乙铵)灌注,由于突触前峰电位延长和突触前纤维中出现多次放电,会大大增强DR-EPSP。在灌注含TEA或4-AP的零Ca2+、2 mM Mn2+溶液的离体两栖类脊髓中,证明了运动神经元与初级传入神经末梢之间的逆向电耦合。在这些条件下,腹根冲动可能在一些感觉纤维中诱发局部分级去极化电位。这种逆向耦合电位可以达到产生单次或多次放电的临界水平。