College of Physics Science, Qingdao University, Qingdao, 266071, PR China.
Chem Commun (Camb). 2011 Jun 14;47(22):6398-400. doi: 10.1039/c1cc10863h. Epub 2011 May 9.
We report for the first time the fabrication of p-type SiC nanowire field-effect transistors (FETs) using an individual Al-doped 3C-SiC nanowire with a single crystalline structure. The Raman spectroscopy of the as-grown p-type wire indicates that the linewidth and peak intensity of LO-phonon bands are sensitive to temperature variations.
我们首次报道了使用具有单晶结构的单个掺铝 3C-SiC 纳米线来制造 p 型 SiC 纳米线场效应晶体管 (FET)。所生长的 p 型线的拉曼光谱表明，LO 声子带的线宽和峰值强度对温度变化敏感。
