Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur-700 032, Kolkata, India.
ACS Appl Mater Interfaces. 2011 Jun;3(6):2130-5. doi: 10.1021/am200339v. Epub 2011 May 17.
Here, we report the synthesis of vertically aligned gallium sulfide (GaS) nanohorn arrays using simple vapor-liquid-solid (VLS) method. The morphologies of GaS nano and microstructures are tuned by controlling the temperature and position of the substrate with respect to the source material. A plausible mechanism for the controlled growth has been proposed. It is important to note that the turn-on field value of GaS nanohorns array is found to be the low turn-on field 4.2 V/μm having current density of 0.1 μA/cm(2). The striking feature of the field emission behavior of the GaS nanohorn arrays is that the average emission current remains nearly constant over long time without any degradation.
在这里，我们报告了使用简单的气-液-固（VLS）方法合成垂直排列的硫化镓（GaS）纳米角阵列。通过控制衬底相对于源材料的温度和位置来调节 GaS 纳米和微结构的形态。提出了一种用于控制生长的合理机制。值得注意的是，GaS 纳米角阵列的开启电场值被发现是低开启电场 4.2 V/μm，具有 0.1 μA/cm(2)的电流密度。GaS 纳米角阵列场发射行为的显著特点是，平均发射电流在长时间内几乎保持不变，没有任何退化。
