Notre Dame Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556, USA.
J Am Chem Soc. 2011 Jun 22;133(24):9607-15. doi: 10.1021/ja203131b. Epub 2011 May 25.
The presence of sulfide/polysulfide redox couple is crucial in achieving stability of metal chalcogenide (e.g., CdS and CdSe)-based quantum dot-sensitized solar cells (QDSC). However, the interfacial charge transfer processes play a pivotal role in dictating the net photoconversion efficiency. We present here kinetics of hole transfer, characterization of the intermediates involved in the hole oxidation of sulfide ion, and the back electron transfer between sulfide radical and electrons injected into TiO(2) nanoparticles. The kinetic rate constant (10(7)-10(9) s(-1)) for the hole transfer obtained from the emission lifetime measurements suggests slow hole scavenging from CdSe by S(2-) is one of the limiting factors in attaining high overall efficiency. The presence of the oxidized couple, by addition of S or Se to the electrolyte, increases the photocurrent, but it also enhances the rate of back electron transfer.
硫离子/多硫化物氧化还原对的存在对于实现基于金属硫属化物(例如 CdS 和 CdSe)的量子点敏化太阳能电池(QDSC)的稳定性至关重要。然而,界面电荷转移过程在决定净光转换效率方面起着关键作用。我们在这里介绍了空穴转移的动力学、参与硫离子空穴氧化的中间体的特性以及硫自由基和注入 TiO2 纳米颗粒的电子之间的反向电子转移。通过发射寿命测量获得的空穴转移的动力学速率常数(10(7)-10(9) s(-1))表明,S(2-)从 CdSe 中缓慢地空穴捕获是实现高整体效率的限制因素之一。通过向电解质中添加 S 或 Se 来增加氧化对的存在会增加光电流,但也会增加反向电子转移的速率。