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束状 VO2 纳米结构的制备及其温度依赖场发射性能。

Fabrication and temperature-dependent field-emission properties of bundlelike VO2 nanostructures.

机构信息

Key Laboratory of Polar Materials and Devices (Ministry of Education of China), Department of Electronic Engineering, East China Normal University, Shanghai 200241, China.

出版信息

ACS Appl Mater Interfaces. 2011 Jun;3(6):2057-62. doi: 10.1021/am200291a. Epub 2011 Jun 2.

Abstract

Bundlelike VO(2)(B) nanostructures were synthesized via a hydrothermal method, and VO(2)(M(1)/R) nanobundles were obtained after a heat-treatment process. Structural characterization shows that these nanobundles are self-assembled by VO(2) nanowires, and VO(2)(M(1)/R) nanobundles have better crystallinity. Temperature-dependent field-emission (FE) measurement indicates that FE properties of these two phases of nanobundles can both be improved by increasing the ambient temperature. Moreover, for the VO(2)(M(1)/R) nanobundles, their FE properties are also strongly dependent on the temperature-induced metal-insulator transitions process. Compared with poor FE properties found in the insulating phase, FE properties were significantly improved by increasing the temperature, and about a three-orders-of-magnitude increasing of the emission current density has been observed at a fixed field of 6 V/μm. Work function measurement and density-functional theory calculations indicated that the decrease of work function with temperature is the main reason that caused the improvement of FE properties. These characteristics make VO(2)(M(1)/R) a candidate material for application of new type of temperature-controlled field emitters, whose emission density can be adjusted by ambient temperature.

摘要

通过水热法合成了类似束状的 VO(2)(B) 纳米结构,经过热处理过程得到了 VO(2)(M(1)/R)纳米束。结构表征表明,这些纳米束是由 VO(2)纳米线自组装而成的,并且 VO(2)(M(1)/R)纳米束具有更好的结晶度。温度依赖的场发射(FE)测量表明,通过提高环境温度可以改善这两种纳米束的 FE 性能。此外,对于 VO(2)(M(1)/R)纳米束,其 FE 性能也强烈依赖于温度诱导的金属-绝缘体转变过程。与绝缘相中较差的 FE 性能相比,通过增加温度可以显著提高 FE 性能,并且在固定的 6 V/μm 电场下,发射电流密度已经观察到约三个数量级的增加。功函数测量和密度泛函理论计算表明,功函数随温度的降低是导致 FE 性能提高的主要原因。这些特性使得 VO(2)(M(1)/R)成为新型温度控制场发射体的候选材料,其发射密度可以通过环境温度进行调节。

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