Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan.
ACS Appl Mater Interfaces. 2011 Jul;3(7):2417-24. doi: 10.1021/am2003284. Epub 2011 Jun 15.
Electrochemical pore formation in Si using an anodized needle electrode was studied. In the electrochemical process, a Pt, Ir or Pd needle with a diameter of 50-200 μm was brought into contact at its tip with a Si wafer, which was not connected to an external circuit, in HF solution. By applying an anodic potential to the needle electrode against a Pt counter electrode, a pore with a diameter slightly larger than the diameter of the needle electrode was formed in both p-type and n-type Si, of which current efficiency was higher for n-type Si. Through-holes were electrochemically formed in p-type and n-type Si wafers at speeds higher than 30 μm min(-1) using a sharpened Ir needle electrode. A model was proposed to explain the results, in which the pore formation was attributed to successive dissolution of Si atoms near the 3-phase (Si/metal/HF solution) boundary by positive holes injected from the needle electrode to the surface of Si.
使用阳极氧化针电极在 Si 中进行电化学空化研究。在电化学过程中，将直径为 50-200μm 的 Pt、Ir 或 Pd 针电极的尖端与未连接到外部电路的 Si 晶片接触，在 HF 溶液中。通过对针电极相对于 Pt 对电极施加阳极电势，在 p 型和 n 型 Si 中形成直径略大于针电极直径的孔，其中 n 型 Si 的电流效率更高。使用锐化的 Ir 针电极，在 p 型和 n 型 Si 晶片上电化学反应形成贯穿孔的速度高于 30μm min(-1)。提出了一个模型来解释这些结果，其中空化的形成归因于从针电极注入到 Si 表面的正空穴连续溶解 Si 原子附近的三相（Si/金属/HF 溶液）边界。
