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氧化机制导致纳米二氧化硅诱导 PC12 细胞发育神经毒性。

Oxidative mechanisms contribute to nanosize silican dioxide-induced developmental neurotoxicity in PC12 cells.

机构信息

Department of Pharmaceutics, School of Pharmacy, East China University of Science and Technology, Shanghai 200237, PR China.

出版信息

Toxicol In Vitro. 2011 Dec;25(8):1548-56. doi: 10.1016/j.tiv.2011.05.019. Epub 2011 May 24.

DOI:10.1016/j.tiv.2011.05.019
PMID:21635944
Abstract

Neurotoxicity was investigated in nano-SiO2-treated cultured PC12 cells, an in vitro neuronal cell model, in order to define a relatively safe dose range for its application. The following were observed in the present study: (1) A dose-dependent increase in the level of reactive oxygen species (ROS) with a corresponding decrease in the level of glutathione (R2=0.965) suggesting 20- and 50-nm SiO2-induced free radical generation and glutathione depletion. (2) A dose- and time-dependent decrease in cell viability that was associated with elevation of ROS level, especially after 24-h nano-SiO2 exposure (R2=0.965), suggesting the role of oxidative stress on nano-SiO2 induced cell death. (3) An increase in the level of thiobarbituric-acid reactive species that correlated reversely with cell viability of the PC12 cells treated with nano-SiO2 (R2=0.945) suggesting nano-SiO2-induced membrane damage caused by lipid peroxidation. (4) A dose-dependent increase in sub-G1 population in SiO2-exposed cells along with cell shrinkage and nuclear condensation from morphological examination suggesting nano-SiO2-induced cell apoptosis. Furthermore, nano-SiO2 exposure diminished the ability of neurite extension in response to nerve growth factor in treated PC12 cells. In summary, SiO2 nanoparticle exposure resulted in dose-dependent neurotoxicity in cultured PC12 cells that was probably associated with oxidative stress and induced apoptosis.

摘要

为了确定纳米二氧化硅应用的相对安全剂量范围,我们研究了纳米二氧化硅处理的 PC12 细胞(一种体外神经元细胞模型)的神经毒性。本研究观察到:(1)活性氧(ROS)水平呈剂量依赖性增加,谷胱甘肽(GSH)水平相应降低(R2=0.965),提示 20nm 和 50nmSiO2 诱导自由基生成和 GSH 耗竭。(2)细胞活力呈剂量和时间依赖性下降,与 ROS 水平升高有关,尤其是在纳米二氧化硅暴露 24 小时后(R2=0.965),提示氧化应激在纳米二氧化硅诱导的细胞死亡中起作用。(3)与经纳米二氧化硅处理的 PC12 细胞的细胞活力呈负相关的丙二醛反应性物质水平增加,提示纳米二氧化硅诱导的由脂质过氧化引起的细胞膜损伤。(4)形态学检查显示,SiO2 暴露细胞的亚 G1 群体呈剂量依赖性增加,同时伴有细胞收缩和核浓缩,提示纳米二氧化硅诱导细胞凋亡。此外,纳米二氧化硅暴露降低了经处理的 PC12 细胞对神经生长因子促进的轴突延伸的能力。总之,纳米二氧化硅暴露导致培养的 PC12 细胞产生剂量依赖性神经毒性,可能与氧化应激和诱导的细胞凋亡有关。

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