Institute of Microelectronics, Peking University, Beijing, People's Republic of China.
Nanotechnology. 2011 Jul 29;22(30):305301. doi: 10.1088/0957-4484/22/30/305301. Epub 2011 Jun 23.
Vertical Si nano-rings with a uniform thickness of about 100 nm have been fabricated by conventional optical photolithography with a low cost based on Poisson diffraction. Moreover, the roughness of the Si nano-rings can be effectively reduced by sacrificial oxidation. In order to increase the density of the nano-rings, coaxial twin Si nano-rings have been fabricated by the Poisson diffraction method combined with the spacer technique. The thickness of both the inner and outer Si nano-rings is about 60 nm, and the gap between the twin nano-rings is about 100 nm.
通过基于泊松衍射的低成本常规光学光刻技术，制备了具有约 100nm 均匀厚度的垂直 Si 纳米环。此外，通过牺牲氧化可以有效降低 Si 纳米环的粗糙度。为了增加纳米环的密度，通过结合间隔技术的泊松衍射方法制备了同轴双 Si 纳米环。内、外 Si 纳米环的厚度约为 60nm，双纳米环之间的间隙约为 100nm。
