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宽能隙氟化石墨烯半导体的简易合成。

Facile synthesis of wide-bandgap fluorinated graphene semiconductors.

机构信息

Nanotechnology Center, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong SAR, PR China.

出版信息

Chemistry. 2011 Aug 1;17(32):8896-903. doi: 10.1002/chem.201100699. Epub 2011 Jun 28.

DOI:10.1002/chem.201100699
PMID:21714019
Abstract

The bandgap opening of graphene is extremely important for the expansion of the applications of graphene-based materials into optoelectronics and photonics. Current methods to open the bandgap of graphene have intrinsic drawbacks including small bandgap openings, the use hazardous/harsh chemical oxidations, and the requirement of expensive chemical-vapor deposition technologies. Herein, an eco-friendly, highly effective, low-cost, and highly scalable synthetic approach is reported for synthesizing wide-bandgap fluorinated graphene (F-graphene or or fluorographene) semiconductors under ambient conditions. In this synthesis, ionic liquids are used as the only chemical to exfoliate commercially available fluorinated graphite into single and few-layer F-graphene. Experimental and theoretical results show that the bandgap of F-graphene is largely dependent on the F coverage and configuration, and thereby can be tuned over a very wide range.

摘要

石墨烯的带隙打开对于将基于石墨烯的材料的应用扩展到光电学和光子学领域是极其重要的。目前打开石墨烯带隙的方法存在固有缺陷,包括带隙打开小、使用危险/苛刻的化学氧化、以及需要昂贵的化学气相沉积技术。在此,报道了一种在环境条件下合成具有宽带隙的氟化石墨烯(F-石墨烯或氟化石墨)半导体的环保、高效、低成本和高可扩展的合成方法。在这种合成中,离子液体被用作唯一的化学试剂,将商业上可获得的氟化石墨剥离成单层和少层 F-石墨烯。实验和理论结果表明,F-石墨烯的带隙在很大程度上取决于 F 的覆盖和构型,因此可以在很宽的范围内进行调节。

相似文献

1
Facile synthesis of wide-bandgap fluorinated graphene semiconductors.宽能隙氟化石墨烯半导体的简易合成。
Chemistry. 2011 Aug 1;17(32):8896-903. doi: 10.1002/chem.201100699. Epub 2011 Jun 28.
2
Fluorographene: a wide bandgap semiconductor with ultraviolet luminescence.氟化石墨烯:具有宽带隙和紫外发光的半导体。
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Graphene in light: design, synthesis and applications of photo-active graphene and graphene-like materials.光中的石墨烯:光活性石墨烯和类石墨烯材料的设计、合成及应用。
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Two-Dimensional Fluorinated Graphene: Synthesis, Structures, Properties and Applications.二维氟化石墨烯:合成、结构、性质及应用
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Band gaps and structural properties of graphene halides and their derivates: a hybrid functional study with localized orbital basis sets.石墨烯卤化物及其衍生物的能带隙和结构性质:基于局域轨道基组的杂化泛函研究。
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Single- and few-layer graphene growth on stainless steel substrates by direct thermal chemical vapor deposition.在不锈钢衬底上通过直接热化学气相沉积生长单层和少层石墨烯。
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Facile preparation of nitrogen-doped few-layer graphene via supercritical reaction.通过超临界反应制备氮掺杂少层石墨烯。
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Synthesis, properties, and dispersion of few-layer graphene fluoride.少层氟化石墨烯的合成、性质及分散
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