Carbone D, Alija A, Plantevin O, Gago R, Facsko S, Metzger T H
ESRF, 6 rue Jules Horowitz, F-38043 Grenoble Cedex, France.
Nanotechnology. 2008 Jan 23;19(3):035304. doi: 10.1088/0957-4484/19/03/035304. Epub 2007 Dec 13.
We present a study of the early stage of ripple formation on Ge(001) surfaces irradiated by a 1 keV Xe(+) ion beam at room temperature and near-normal incidence. A combination of a grazing incidence x-ray scattering technique and atomic force microscopy allowed us to observe a variation of the symmetry of the surface nanopattern upon increase of the ion fluence. The isotropic dot pattern formed during the first minutes of sputtering evolves into an anisotropic ripple pattern for longer sputtering time. These results provide a new basis for further steps in the theoretical description of the morphology evolution during ion beam sputtering.
我们展示了一项关于在室温及近垂直入射条件下，用1 keV Xe(+)离子束辐照Ge(001)表面时波纹形成早期阶段的研究。掠入射X射线散射技术与原子力显微镜相结合，使我们能够观察到随着离子注量增加，表面纳米图案对称性的变化。溅射开始几分钟内形成的各向同性点图案，在较长溅射时间后演变成各向异性波纹图案。这些结果为离子束溅射过程中形貌演变的理论描述的进一步发展提供了新的基础。
