Bhaskar Ankam, Chang H Y, Chang T H, Cheng S Y
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, Republic of China.
Nanotechnology. 2007 Oct 3;18(39):395704. doi: 10.1088/0957-4484/18/39/395704. Epub 2007 Sep 4.
Lead zirconate titanate (Pb(1.1)(Zr(0.52)Ti(0.48))O(3)) thin films of thickness 260 nm on Pt/Ti/SiO(2)/Si substrates were densified by 2.45 GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700 °C for 30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450 °C and the film was fully crystallized. The secondary (again pyrochlore) phase was observed in the PZT thin films, which were annealed above 550 °C. The surface morphologies were changed above 550 °C of the PZT thin films due to the secondary phase. Higher dielectric constant (ε(r)) and lower dielectric loss coercive field (E(c)) were achieved for the 450 °C film than for the other annealed films.
在Pt/Ti/SiO₂/Si衬底上制备的厚度为260 nm的锆钛酸铅（Pb(1.1)(Zr(0.52)Ti(0.48))O₃）薄膜通过2.45 GHz微波退火进行致密化处理。将PZT薄膜在400至700 °C的不同退火温度下退火30分钟。X射线衍射表明，在450 °C时，焦绿石相转变为钙钛矿相，且薄膜完全结晶。在550 °C以上退火的PZT薄膜中观察到了二次（再次为焦绿石）相。由于二次相的存在，PZT薄膜在550 °C以上时表面形貌发生了变化。450 °C退火的薄膜比其他退火薄膜具有更高的介电常数（ε(r)）和更低的介电损耗矫顽场（E(c)）。
