Jung Minkyung, Song Woon, Sung Lee Joon, Kim Nam, Kim Jinhee, Park Jeunghee, Lee Hyoyoung, Hirakawa Kazuhiko
Korea Research Institute of Standards and Science, Daejeon 305-600, Korea.
Nanotechnology. 2008 Dec 10;19(49):495702. doi: 10.1088/0957-4484/19/49/495702. Epub 2008 Nov 19.
We report the electrical breakdown behavior and subsequent nanogap formation of In(2)O(3)/InO(x) core/shell heterostructure nanowires with substrate-supported and suspended structures. The radial heterostructure nanowires, composed of crystalline In(2)O(3) cores and amorphous In-rich shells, are grown by chemical vapor deposition. As the nanowires broke down, they exhibited two distinct current drops in the current-voltage characteristics. The tips of the broken nanowires were found to have a cone or a volcano shape depending on the width of the nanowire. The shape, the size, and the position of the nanogap depend strongly on the device structure and the nanowire dimensions. The substrate-supported and the suspended devices exhibit distinct breakdown behavior which can be explained by the diffusive thermal transport model. The breakdown temperature of the nanowire is estimated to be about 450 K, close to the melting temperature of indium. We demonstrated the usefulness of this technique by successful fabrication of working pentacene field-effect transistors.
我们报道了具有衬底支撑和悬空结构的In(2)O(3)/InO(x)核壳异质结构纳米线的电击穿行为及随后的纳米间隙形成。由结晶In(2)O(3)核和富铟非晶壳组成的径向异质结构纳米线通过化学气相沉积生长。当纳米线发生击穿时，它们在电流-电压特性中表现出两个明显的电流下降。发现断裂纳米线的尖端根据纳米线的宽度具有圆锥或火山形状。纳米间隙的形状、尺寸和位置强烈依赖于器件结构和纳米线尺寸。衬底支撑和悬空器件表现出不同的击穿行为，这可以用扩散热传输模型来解释。纳米线的击穿温度估计约为450 K，接近铟的熔点。我们通过成功制造工作的并五苯场效应晶体管证明了该技术的实用性。
