Hong Kunquan, Xie Maohai, Hu Rong, Wu Huasheng
Physics Department and the HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China.
Nanotechnology. 2008 Feb 27;19(8):085604. doi: 10.1088/0957-4484/19/8/085604. Epub 2008 Feb 1.
Tungsten oxide nanowires with controllable diameter were synthesized on Si substrates by thermal evaporation of tungsten trioxide powder in a tube furnace. Depending on the temperature of the source (900-1000 °C), tungsten oxide W(18)O(49) nanowires with diameters ranging from 10 to 100 nm are obtained with high yield. The exponential dependence of the nanowire diameter on the source temperature leads to an energy of about 2.0 eV. The growth process is discussed; it is believed to be a kinetic effect.
通过在管式炉中热蒸发三氧化钨粉末，在硅衬底上合成了直径可控的氧化钨纳米线。根据源温度（900 - 1000°C），可高产率获得直径范围为10至100纳米的氧化钨W(18)O(49)纳米线。纳米线直径对源温度的指数依赖性导致约2.0电子伏特的能量。讨论了生长过程，认为这是一种动力学效应。
