Hamden Erika T, Greer Frank, Hoenk Michael E, Blacksberg Jordana, Dickie Matthew R, Nikzad Shouleh, Martin D Christopher, Schiminovich David
Department of Astronomy, Columbia University, 550 W. 120th Street, New York, New York 10025, USA.
Appl Opt. 2011 Jul 20;50(21):4180-8. doi: 10.1364/AO.50.004180.
We report on the development of coatings for a charged-coupled device (CCD) detector optimized for use in a fixed dispersion UV spectrograph. Because of the rapidly changing index of refraction of Si, single layer broadband antireflection (AR) coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a coated CCD detector with theoretical quantum efficiencies (QEs) of greater than 60% at wavelengths from 120 to 300 nm. This high efficiency may be reached by coating a backside-illuminated, thinned, delta-doped CCD with a series of thin film AR coatings. The materials tested include MgF(2) (optimized for highest performance from 120-150 nm), SiO(2) (150-180 nm), Al(2)O(3) (180-240 nm), MgO (200-250 nm), and HfO(2) (240-300 nm). A variety of deposition techniques were tested and a selection of coatings that minimized reflectance on a Si test wafer were applied to functional devices. We also discuss future uses and improvements, including graded and multilayer coatings.
我们报告了一种用于固定色散紫外光谱仪的电荷耦合器件（CCD）探测器涂层的开发情况。由于硅的折射率变化迅速，单层宽带抗反射（AR）涂层不适用于提高所有感兴趣波长下的量子效率。相反，我们描述了一种创造性的解决方案，该方案在紫外波长范围内具有出色的性能。我们描述了一种涂层CCD探测器的开发进展，该探测器在120至300纳米波长下的理论量子效率（QE）大于60%。通过用一系列薄膜AR涂层涂覆背照式、减薄、δ掺杂的CCD，可以达到这种高效率。测试的材料包括MgF₂（在120 - 150纳米波长下性能优化）、SiO₂（150 - 180纳米）、Al₂O₃（180 - 240纳米）、MgO（200 - 250纳米）和HfO₂（240 - 300纳米）。测试了多种沉积技术，并将在硅测试晶圆上使反射率最小化的一系列涂层应用于功能器件。我们还讨论了未来的用途和改进，包括渐变涂层和多层涂层。
