Nikzad Shouleh, Hoenk Michael, Jewell April D, Hennessy John J, Carver Alexander G, Jones Todd J, Goodsall Timothy M, Hamden Erika T, Suvarna Puneet, Bulmer J, Shahedipour-Sandvik F, Charbon Edoardo, Padmanabhan Preethi, Hancock Bruce, Bell L Douglas
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA.
Department of Physics, Mathematics and Astronomy, California Institute of Technology, Pasadena, CA 91125, USA.
Sensors (Basel). 2016 Jun 21;16(6):927. doi: 10.3390/s16060927.
Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.
天文学、宇宙学、行星研究、生物和医学应用中的紫外线（UV）研究通常需要精确探测微弱物体，并且在许多情况下需要光子计数探测。我们概述了两种在紫外线波段实现光子计数的方法。第一种方法涉及对光子计数硅探测器进行紫外线增强，包括电子倍增电荷耦合器件和雪崩光电二极管。这里使用的方法采用分子束外延进行δ掺杂和超晶格掺杂，以实现表面钝化和高紫外线量子效率。额外的紫外线增强措施包括通过原子层沉积制备的抗反射（AR）和日盲紫外线带通涂层。量子效率（QE）测量表明，对于具有简单抗反射涂层的探测器，在100 - 300纳米范围内量子效率>50%，当使用更复杂的抗反射涂层时，在约206纳米处量子效率≅80%。第二种方法基于具有高量子效率和固有日盲特性的III族氮化物材料中的雪崩光电二极管。
