Nikzad Shouleh, Hoenk Michael E, Greer Frank, Jacquot Blake, Monacos Steve, Jones Todd J, Blacksberg Jordana, Hamden Erika, Schiminovich David, Martin Chris, Morrissey Patrick
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USA.
Appl Opt. 2012 Jan 20;51(3):365-9. doi: 10.1364/AO.51.000365.
We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.
我们采用基于分子束外延（MBE）的δ掺杂技术，在用于单光子计数检测应用的硅电子倍增电荷耦合器件（EMCCD）上实现了近100%的内部量子效率（QE）。我们使用原子层沉积（ALD）制备抗反射（AR）涂层，并实现了对界面和薄膜材料参数的原子尺度控制。通过结合MBE和ALD的精确控制，我们在百万像素阵列的远紫外和近紫外波段展示了超过50%的外部QE。我们还证明了诸如暗电流等其他重要的器件性能参数在这些工艺之后保持不变。在本文中，我们简要回顾紫外检测，报告这些结果，并简要讨论所采用的技术和工艺。
